Characterisation of a new hump-free device structure for smart power and embedded memory technologies

Microelectronic Engineering

Volumn 81, Issue 1, 2005, Pages 132-139

  Schwantes, Stefan ^a   Fuerthaler, Josef ^a   Stephan, Thilo ^a   Graf, Michael ^a   Dudek, Volker ^a   Barry, Tim ^b   Miller, Gayle ^b   Shen, James ^b  

^a Atmel Germany GmbH   (Germany)

^b ATMEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; HOT CARRIERS; SEMICONDUCTOR DOPING; SILICON WAFERS; TRANSISTORS;

EMBEDDED MEMORY TECHNOLOGIES; GATE DIELECTRICS; HUMP EFFECT; ISOLATING TRENCH;

POWER ELECTRONICS;

EID: 21644441364     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.007     Document Type: Article

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