On the degradation of organic field-effect transistors

Proceedings of the International Conference on Microelectronics, ICM

Volumn , Issue , 2004, Pages 76-79

  Pannemann, Ch ^a   Diekmann, T ^a   Hilleringmann, U ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA FLOW GRAPH (DFG); ORGANIC FIELD-EFFECT TRANSISTORS; POST-PROCESSINGS; VACUUM CONDITIONS;

AMORPHOUS SILICON; DEGRADATION; POLYMERS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; THIN FILMS; VACUUM;

FIELD EFFECT TRANSISTORS;

EID: 21644437941     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. th Device Research Conference Digest, 1999, pp. 164-165
2. Y. Qiu, Y. Hu, G. Dong, L. Wang, J. Xie, and Y. Ma, Appl. Phys. Letters, (83), 8, 2003, pp. 1644-1646
3. T. Komoda, K. Kita, K. Kyuno, and A. Toriumi, Jpn. J. Appl. Phys., (42), 2003, pp. 3662-3665
4. S.J. Zilker, C. Detcheverry, E. Cantatore, and D.M. de Leeuw, Appl. Phys. Lett., (79), 8, 2001, pp. 1124-1126
5. Y.-Y. Lin, D.J. Gundlach, S.F. Nelson, and T.N. Jackson, IEEE Electron Device Letters, 18, No. 12, 1997, pp. 606-608
6. J. E. Northrup, and M. L. Chabinyc, Phys. Rev. B, (68), pp.041202, (2003)
7. Ch. Pannemann, T. Diekmann, and U. Hilleringmann, Microelectronic Engineering (MEE), 1, 67-68C, (2003), pp. 852-859
8. D. Knipp, R. A. Street, A. Völkel, and J. Ho, Journal of Applied Physics, (93), 4, 2003, pp. 347-355
9. O. D. Jurchescu, J. Baas, T. T. M. Palstra, Appl. Phys. Lett., (84), 16, 2004, pp. 3061-3063
10. S. Verlaak, V. Arkhipov, and P. Heremans, Appl. Phys. Lett., (82), 5, 2003, pp. 745-747