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Volumn 49, Issue 7, 2005, Pages 1179-1184

On the threshold voltage of metal-oxide-semiconductor field-effect transistors

Author keywords

Linear extrapolation; MOSFET; Surface potential pinning; Threshold voltage

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; EXTRAPOLATION; MATHEMATICAL MODELS; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

EID: 21444435470     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.04.010     Document Type: Article
Times cited : (9)

References (17)
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    • Benson, J.1    D'Halleweyn, N.V.2    Redman-White, W.3    Easson, C.A.4    Uren, M.J.5    Faynot, O.6
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    • Cheng, Y.1    Chen, K.2    Imai, K.3    Hu, C.4
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    • On the threshold voltage of symmetrical double-gate metal-oxide- semiconductor capacitor with intrinsic silicon body
    • M. Wong, and X. Shi On the threshold voltage of symmetrical double-gate metal-oxide-semiconductor capacitor with intrinsic silicon body IEEE Trans Electron Dev 51 10 2004 1600 1604
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    • Wong, M.1    Shi, X.2
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    • "exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom"
    • A. Ortiz-Conde, F.J. García Sánchez, and M. Guzmán "Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom" Solid-State Electron 47 2003 2067 2074
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    • Ortiz-Conde, A.1    García Sánchez, F.J.2    Guzmán, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.