-
4
-
-
0040783400
-
N-Type surface conductivity on p-type germanium
-
W.L. Brown n-Type surface conductivity on p-type germanium Phys Rev 91 3 1953 518 526
-
(1953)
Phys Rev
, vol.91
, Issue.3
, pp. 518-526
-
-
Brown, W.L.1
-
5
-
-
0003906956
-
-
Copyright ©1999
-
Liu W, Jin X, Chen J, Jeng M-C, Liu Z, Cheng Y, et al. BSIM3v3.2.2 MOSFET Model Users' Manual, Copyright ©1999.
-
BSIM3v3.2.2 MOSFET Model Users' Manual
-
-
Liu, W.1
Jin, X.2
Chen, J.3
Jeng, M.-C.4
Liu, Z.5
Cheng, Y.6
-
6
-
-
21444454354
-
-
Unpublished Copyright ©1991-2001 Avant! Corp. and TMA, Inc.
-
MEDICI (TM) Version 2001.4.0. Unpublished Copyright ©1991-2001 Avant! Corp. and TMA, Inc.
-
MEDICI (TM) Version 2001.4.0
-
-
-
9
-
-
0035341045
-
A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling
-
J. Benson, N.V. D'Halleweyn, W. Redman-White, C.A. Easson, M.J. Uren, and O. Faynot A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling IEEE Trans Electron Dev 48 5 2001 1019 1021
-
(2001)
IEEE Trans Electron Dev
, vol.48
, Issue.5
, pp. 1019-1021
-
-
Benson, J.1
D'Halleweyn, N.V.2
Redman-White, W.3
Easson, C.A.4
Uren, M.J.5
Faynot, O.6
-
10
-
-
0035308164
-
New approach for defining the threshold voltage of MOSFETs
-
J.A. Salcedo, A. Ortiz-Conde, F.J. García Sánchez, J. Muci, J.J. Liou, and Y. Yue New approach for defining the threshold voltage of MOSFETs IEEE Trans Electron Dev 48 4 2001 809 813
-
(2001)
IEEE Trans Electron Dev
, vol.48
, Issue.4
, pp. 809-813
-
-
Salcedo, J.A.1
Ortiz-Conde, A.2
García Sánchez, F.J.3
Muci, J.4
Liou, J.J.5
Yue, Y.6
-
11
-
-
0032138426
-
A unified MOSFET channel charge model for device modeling in circuit simulation
-
Y. Cheng, K. Chen, K. Imai, and C. Hu A unified MOSFET channel charge model for device modeling in circuit simulation IEEE Trans Comput Aided Des Integr Circ Sys 17 8 1998 641 644
-
(1998)
IEEE Trans Comput Aided des Integr Circ Sys
, vol.17
, Issue.8
, pp. 641-644
-
-
Cheng, Y.1
Chen, K.2
Imai, K.3
Hu, C.4
-
12
-
-
36149024384
-
Physical Theory of Semiconductor Surfaces
-
C.G.B. Garrett, and W.H. Brattain Physical Theory of Semiconductor Surfaces Phys Rev 99 2 1955 376 387
-
(1955)
Phys Rev
, vol.99
, Issue.2
, pp. 376-387
-
-
Garrett, C.G.B.1
Brattain, W.H.2
-
13
-
-
36849131222
-
Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor
-
R.H. Kingston, and S.F. Neustadter Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor J Appl Phys 26 1955 718
-
(1955)
J Appl Phys
, vol.26
, pp. 718
-
-
Kingston, R.H.1
Neustadter, S.F.2
-
14
-
-
5444247393
-
On the threshold voltage of symmetrical double-gate metal-oxide- semiconductor capacitor with intrinsic silicon body
-
M. Wong, and X. Shi On the threshold voltage of symmetrical double-gate metal-oxide-semiconductor capacitor with intrinsic silicon body IEEE Trans Electron Dev 51 10 2004 1600 1604
-
(2004)
IEEE Trans Electron Dev
, vol.51
, Issue.10
, pp. 1600-1604
-
-
Wong, M.1
Shi, X.2
-
17
-
-
0043231390
-
"exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom"
-
A. Ortiz-Conde, F.J. García Sánchez, and M. Guzmán "Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom" Solid-State Electron 47 2003 2067 2074
-
(2003)
Solid-State Electron
, vol.47
, pp. 2067-2074
-
-
Ortiz-Conde, A.1
García Sánchez, F.J.2
Guzmán, M.3
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