Polarization-induced electron island in semiconductor grain placed into pyroelectric matrix

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2340-2342

  Kachorovskii, V Yu ^a,b   Shur, M S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN POLARIZATION; GRAIN SURFACE; PYROELECTRIC MATRIX; SEMICONDUCTOR GRAINS;

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRON GAS; ELECTRON TUNNELING; GRAIN SIZE AND SHAPE; OSCILLATIONS; OSCILLATORS (ELECTRONIC); POLARIZATION; PYROELECTRICITY; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR MATERIALS;

EID: 2142698664     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1691197     Document Type: Article

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