Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC

Thin Solid Films

Volumn 485, Issue 1-2, 2005, Pages 207-211

  Eichfeld, C M ^a   Horsey, M A ^a   Mohney, S E ^a   Adedeji, A V ^b   Williams, J R ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

Diffusion barrier; Ohmic contact; SiC; Ta Ru N

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIFFUSION; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; HIGH TEMPERATURE EFFECTS; OHMIC CONTACTS; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT RESISTANCE; DIFFUSION BARRIERS; SIC; TA-RU-N;

TERNARY SYSTEMS;

EID: 21344434542     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.005     Document Type: Article

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