Tight-binding quantum chemical molecular dynamics study on depth profile prediction in low energy boron implantation process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2288-2293

  Tsuboi, Hideyuki ^a   Sagawa, Ai ^a   Iga, Hideki ^a   Sasata, Katsumi ^a   Masuda, Tsuyoshi ^a   Koyama, Michihisa ^a   Kubo, Momoji ^a,b   Broclawik, Ewa ^a   Yabuhara, Hidehiko ^c   Miyamoto, Akira ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Boron implantation; Orientation of implantation; Silicon semiconductor; Tight binding quantum chemical molecular dynamics; Ultra shallow junction

Indexed keywords

BORON; HYDROGEN; LSI CIRCUITS; OPTIMIZATION; QUANTUM THEORY; ROTATION; SEMICONDUCTING SILICON;

BORON IMPLANTATION; ORIENTATION OF IMPLANTATION; TIGHT-BINDING QUANTUM CHEMICAL MOLECULAR DYNAMICS; ULTRA-SHALLOW JUNCTIONS;

MOLECULAR DYNAMICS;

EID: 21244487816     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2288     Document Type: Conference Paper

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