A theoretical study on the realistic low concentration doping in silicon semiconductors by accelerated quantum chemical molecular dynamics method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1877-1881

  Yokosuka, Toshiyuki ^a   Sasata, Katsumi ^a   Kurokawa, Hitoshi ^a   Takami, Seiichi ^a   Kubo, Momoji ^a   Imamura, Akira ^b   Kitahara, Yoshiyuki ^c   Kanoh, Masaaki ^c   Miyamoto, Akira ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HIROSHIMA KOKUSAI GAKUIN UNIVERSITY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Accelerated quantum chemical molecular dynamics method; Computational chemistry; Density of states; Silicon

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MOLECULAR DYNAMICS; QUANTUM THEORY; SEMICONDUCTOR DOPING;

ACCELERATED QUANTUM CHEMICAL MOLECULAR DYNAMICS METHOD; DOPANT;

SEMICONDUCTING SILICON;

EID: 0037672164     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1877     Document Type: Article

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