Optical characteristics of responsivity-enhanced InGaAs/InP heterojunction phototransistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2537-2540

  Jo, Young Chang ^a,b   Joe, Seuk Jin ^c   Kim, Hoon ^a   Choi, Pyong ^b  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Kyungpook National University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Heterojunction; HPT; InP InGaAs; Photodetector; Phototransistor; Responsivity

Indexed keywords

ABSORPTION; AMPLIFICATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION PHOTOTRANSISTORS; HPT; INP/INGAAS; RESPONSIVITY;

PHOTOTRANSISTORS;

EID: 21244474370     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2537     Document Type: Conference Paper

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