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Volumn 44, Issue 4 B, 2005, Pages 2726-2728

Pulsed current-voltage-temperature characteristics of AlGaN/GaN high electron mobility transistor under isothermal conditions

Author keywords

Current collapse; Gallium nitride; High electron mobility transistor; Pulsed current voltage measurement

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HEATING; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; OHMIC CONTACTS; SAPPHIRE; SUBSTRATES;

EID: 21244461490     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2726     Document Type: Conference Paper
Times cited : (6)

References (4)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.