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Volumn 44, Issue 4 B, 2005, Pages 2726-2728
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Pulsed current-voltage-temperature characteristics of AlGaN/GaN high electron mobility transistor under isothermal conditions
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Author keywords
Current collapse; Gallium nitride; High electron mobility transistor; Pulsed current voltage measurement
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
HEATING;
HIGH ELECTRON MOBILITY TRANSISTORS;
METALLORGANIC VAPOR PHASE EPITAXY;
OHMIC CONTACTS;
SAPPHIRE;
SUBSTRATES;
CURRENT COLLAPSE;
POWER SCALING;
PULSED CURRENT-VOLTAGE MEASUREMENT;
SELF-HEATING EFFECTS;
GALLIUM NITRIDE;
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EID: 21244461490
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.2726 Document Type: Conference Paper |
Times cited : (6)
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References (4)
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