Electron transport model for strained silicon-carbon alloy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2257-2262

  Chang, Shu Tong ^a   Lin, Chung Yi ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Alloy scattering; Impurity scattering; Mobility; Monte Carlo simulation; Si1 xCx; Strain

Indexed keywords

ALLOYING; COMPUTER SIMULATION; CONCENTRATION (PROCESS); ELECTRIC FIELD EFFECTS; ENERGY DISSIPATION; IMPURITIES; SILICON ALLOYS; STRAIN RATE;

ALLOY SCATTERING; ELECTRON TRANSPORT; IMPURITY SCATTERING; MOBILITY; SI1-XCX;

ELECTRON MOBILITY;

EID: 21244441504     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2257     Document Type: Conference Paper

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