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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1726-1729

Enhancing P-type conductivity in Mg-doped GaN using oxygen and nitrogen plasma activation

(4) Hwang, Jun Dar a Lai, Zhca Yong a Wu, Ching Yuan a Chang, Shoou Jinn b

a DA YEH UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

GaN; PECVD; Photoluminescence; Plasma assisted activation; Specific contact resistance

Indexed keywords

CHEMICAL ACTIVATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; MAGNESIUM PRINTING PLATES; NITROGEN; OXYGEN; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

NITROGEN VACANCIES; PLASMA ENERGY; PLASMA-ASSISTED ACTIVATION; SPECIFIC CONTACT RESISTANCE;

GALLIUM NITRIDE;

EID: 21244431971 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.1726 Document Type: Article

Times cited : (7)

References (12)

1
- 0029346154
- S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797.
- (1995) Jpn. J. Appl. Phys. , vol.34
- Nakamura, S.¹ Senoh, M.² Iwasa, N.³ Nagahama, S.⁴

2
- 0036493177
- S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu and U. H. Liaw: IEEE J. Sel. Top. Quantum Electron. 8 (2002) 278.
- (2002) IEEE J. Sel. Top. Quantum Electron. , vol.8 , pp. 278
- Chang, S.J.¹ Lai, W.C.² Su, Y.K.³ Chen, J.F.⁴ Liu, C.H.⁵ Liaw, U.H.⁶

3
- 0015481056
- R. A. Logan and C. D. Yhurmond: J. Electrochem. Soc. 119 (1972) 1727.
- (1972) J. Electrochem. Soc. , vol.119 , pp. 1727
- Logan, R.A.¹ Yhurmond, C.D.²

4
- 0001298941
- J. I. Pankove: Mater. Res. Soc. Symp. Proc. 162 (1990) 515.
- (1990) Mater. Res. Soc. Symp. Proc. , vol.162 , pp. 515
- Pankove, J.I.¹

5
- 0000568429
- S. W. Kim, J. M. Lee, Chul Huh, N. M. Park, H. S. Kim, I. H. Lee and S. J. Park: Appl. Phys. Lett. 76 (2000) 3079.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3079
- Kim, S.W.¹ Lee, J.M.² Huh, C.³ Park, N.M.⁴ Kim, H.S.⁵ Lee, I.H.⁶ Park, S.J.⁷

6
- 0026867861
- S. Nakamura, N. Iwasa, M. Senoh and T. Mukai: Jpn. J. Appl. Phys. 31 (1992) 1258.
- (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1258
- Nakamura, S.¹ Iwasa, N.² Senoh, M.³ Mukai, T.⁴

7
- 0026819254
- S. Nakamura, T. Mukai, M. Senoh and N. Iwasa: Jpn. J. Appl. Phys. 31 (1992) L139.
- (1992) Jpn. J. Appl. Phys. , vol.31
- Nakamura, S.¹ Mukai, T.² Senoh, M.³ Iwasa, N.⁴

8
- 0036478467
- C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi: Jpn. J. Appl. Phys. 41 (2002) L112.
- (2002) Jpn. J. Appl. Phys. , vol.41
- Kuo, C.H.¹ Chang, S.J.² Su, Y.K.³ Wu, L.W.⁴ Sheu, J.K.⁵ Chen, C.H.⁶ Chi, G.C.⁷

9
- 84883188181
- H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112.
- (1989) Jpn. J. Appl. Phys. , vol.28
- Amano, H.¹ Kito, M.² Hiramatsu, K.³ Akasaki, I.⁴

10
- 0032131237
- Y. Kamiura, Y. Yamashita and S. Nakamura: Jpn. J. Appl. Phys. 37 (1998) L970.
- (1998) Jpn. J. Appl. Phys. , vol.37
- Kamiura, Y.¹ Yamashita, Y.² Nakamura, S.³

11
- 0034244706
- S. H. Chung, M. Lachab, T. Wang, Y. Lacroix, D. Basak, Q. Fareed, Y. Kawakami, K. Nishino and S. Sakai: Jpn. J. Appl. Phys. 39 (2000) 4749.
- (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 4749
- Chung, S.H.¹ Lachab, M.² Wang, T.³ Lacroix, Y.⁴ Basak, D.⁵ Fareed, Q.⁶ Kawakami, Y.⁷ Nishino, K.⁸ Sakai, S.⁹

12
- 0032531556
- J. K. Sheu, Y. K. Su, G. C. Chi, B. J. Pong, C. Y. Chen, C. N. Huang and W. C. Chen: J. Appl. Phys. 84 (1998) 4590.
- (1998) J. Appl. Phys. , vol.84 , pp. 4590
- Sheu, J.K.¹ Su, Y.K.² Chi, G.C.³ Pong, B.J.⁴ Chen, C.Y.⁵ Huang, C.N.⁶ Chen, W.C.⁷

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