Effect of implanted ion species on the decay kinetics of 2.7 eV photoluminescence in thermal SiO2 films

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6444-6447

  Seol, Kwang Soo ^a   Ohki, Yoshimichi ^a   Nishikawa, Hiroyuki ^b   Takiyama, Makoto ^c   Hama, Yoshimasa ^a  

^a WASEDA UNIVERSITY   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

^c NIPPON STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037892869     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363713     Document Type: Article

References (20)

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