TEM analysis of structure modification induced by additional carbon incorporation in silicon and Si1-xGex layers grown with molecular beam epitaxy

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 595-600

  Bugiel, E ^a   Ruvimov, S ^b   Osten, H J ^a  

^a IHP   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTALLINE MATERIALS; DEFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; WIDE BAND GAP SEMICONDUCTORS;

CARBON INCORPORATION; CRYSTALLINE DEFECTS; DELTA LAYERS; DISLOCATION MOBILITY; MISFIT STRAINS; NOMINAL THICKNESS; STRUCTURE MODIFICATION; TEM ANALYSIS;

SI-GE ALLOYS;

EID: 6944226683     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (10)

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