Effects of temperature and electron effective mass on bias-dependent tunnelling magnetoresistance

Chinese Physics

Volumn 14, Issue 5, 2005, Pages 1025-1031

  Li, Fei Fei ^a   Li, Zheng Zhong ^a   Xiao, Ming Wen ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Magnetotransport effects; Quantum tunnelling

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; THERMAL EFFECTS;

ELECTRON EFFECTIVE MASS; MAGNETOTRANSPORT EFFECTS; SPIN-CHANGE BEHAVIOR; TUNNELING MAGNETORESISTANCE (TMR);

MAGNETORESISTANCE;

EID: 21044456277     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/14/5/030     Document Type: Article

References (15)

1. Sharma M, Wang S X and Nickel J H 1999 Phys. Rev. Lett. 82 616
2. Moodera J S and Mathon G 1999 J. Magn. Magn. Mater. 200 248
3. Zhang J and White R M 1998 J. Appl. Phys. 83 6512
4. Jullière M 1975 Phys. Lett. 54A 225
5. Slonczewski J C 1989 Phys. Rev. B 39 6995
6. Zhang X D, Li B Z, Sun G and Pu F C 1997 Phys. Rev. B 56 5484
7. Li F F, Li Z Z, Xiao M W, Du J, Xu W and Hu A 2004 Phys. Rev. B 69 054410
8. Li F F, Xiao M W, Li Z Z, Hu A and Xu W 2004 Chin. Phys. Lett. 21 2271
9. Montaigne F, Hehn M and Schuhl A 2001 Phys. Rev. B 64 14440
10. White R M 1983 Quantum Theory of Magnetism (Berlin: Springer-Verlag) Chapter 4
11. Moriya T 1985 Spin Fluctuations in Itinerant Electron Magnetism (Berlin: Springer)
12. Duke C B 1969 Tunneling Phenomena in Solids (New York: Plenum) ed E Burstein and S Lundqvist p31
13. Lu Yu, Li X W, Xiao G, Altman R A, Gallagher W J, Marley A, Roche K and Parkin S 1998 J. Appl. Phys. 83 6515
14. Shu Q Q and Ma W G 1992 Appl. Phys. Lett. 61 2542
15. Samsonov G V 1982 The Oxide Handbook (New York: Plenum)