Niobium nitride films formed by rapid thermal processing (RTP): A study of depth profiles and interface reactions by complementary analytical techniques

Analytical and Bioanalytical Chemistry

Volumn 379, Issue 4, 2004, Pages 554-567

  Berendes, A ^a   Brunkahl, O ^a   Angelkort, C ^a   Bock, W ^b   Hofer, F ^c   Warbichler, P ^c   Kolbesen, B O ^a  

^a GOETHE UNIVERSITY   (Germany)

^b University of Koblenz Landau   (Germany)

^c GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Interface reaction (Nb SiO2); Niobium nitride; Nitridation; Oxynitride; Rapid thermal processing (RTP); SNMS depth profile; TEM EELS

Indexed keywords

AMMONIA; DEPOSITION; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; EVAPORATION; GRAIN BOUNDARIES; MASS SPECTROMETRY; NIOBIUM; NITROGEN; SILICA; SILICON; SURFACE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INTERFACE REACTION (NB/SIO2); NIOBIUM NITRIDE; NITRIDATION; OXYNITRIDE; RAPID THERMAL PROCESSING (RTP); SNMS DEPTH PROFILE; TEM/EELS;

NITRIDES;

ANGUILLIFORMES;

AMMONIA; NIOBIUM; NITROGEN; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; MASS SPECTROMETRY; MATERIALS TESTING; METHODOLOGY; SURFACE PROPERTY; TEMPERATURE; X RAY DIFFRACTION;

AMMONIA; CRYSTALLIZATION; MASS SPECTROMETRY; MATERIALS TESTING; MICROSCOPY, ENERGY-FILTERING TRANSMISSION ELECTRON; NIOBIUM; NITROGEN; SILICON DIOXIDE; SPECTROMETRY, MASS, SECONDARY ION; SURFACE PROPERTIES; TEMPERATURE; X-RAY DIFFRACTION;

EID: 21044453607     PISSN: 16182642     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00216-004-2612-3     Document Type: Conference Paper

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