Vanadium nitride films formed by rapid thermal processing (RTP): Depth profiles and interface reactions studied by complementary analytical techniques

Zeitschrift fur Anorganische und Allgemeine Chemie

Volumn 629, Issue 10, 2003, Pages 1769-1777

  Berendes, A ^a   Galesic, I ^a   Mertens, R ^a   Bock, W ^b   Oechsner, H ^b   Warbichler, P ^c   Hofer, F ^c   Theodossiu, E ^a   Baumann, H ^a   Kolbesen, B O ^a  

^a GOETHE UNIVERSITY   (Germany)

^b Inst Oberflachen /S   (Germany)

^c Forsch Inst E   (Germany)

Author keywords

Interface reaction (V SiO2); Nitridation; Oxynitride; Rapid Thermal Processing (RTP); SNMS depth profile; TEM EELS; Vanadium nitride

Indexed keywords

AMMONIA; ARGON; CARBON; CHEMICAL COMPOUND; NITROGEN; OXYGEN; SAPPHIRE; SILICON; SILICON DIOXIDE; UNCLASSIFIED DRUG; VANADIUM DERIVATIVE; VANADIUM NITRIDE;

ANALYTIC METHOD; ARTICLE; CHEMICAL REACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; FILM; HIGH TEMPERATURE PROCEDURES; MASS SPECTROMETRY; NITRIDATION; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0141763682     PISSN: 00442313     EISSN: None     Source Type: Journal    
DOI: 10.1002/zaac.200300128     Document Type: Article

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