Comparison between pulsed terahertz time-domain imaging and continuous wave terahertz imaging

Semiconductor Science and Technology

Volumn 20, Issue 7, 2005, Pages

  Karpowicz, Nicholas ^a   Zhong, Hua ^a   Xu, Jingzhou ^a   Lin, Kuang I ^b   Hwang, Jenn Shyong ^b   Zhang, X C ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC FIELD EFFECTS; FREQUENCY DOMAIN ANALYSIS; INSULATION; LASER PULSES; PHOTOCONDUCTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL TO NOISE RATIO; TIME DOMAIN ANALYSIS;

GUNN NEGATIVE DIFFERENTIAL RESISTANCE EFFECT; OPTICAL PROBE PULSES; OPTICAL PULSES; OPTICAL RECTIFICATION;

IMAGING TECHNIQUES;

EID: 21044451427     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/7/021     Document Type: Article

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