Phase sensitive continuous-wave THz imaging using diode lasers

Electronics Letters

Volumn 40, Issue 2, 2004, Pages 143-145

  Gregory, I S ^a   Tribe, W R ^b   Cole, B E ^b   Baker, C ^a,c   Evans, M J ^b   Bradley, I V ^b   Linfield, E H ^a   Davies, A G ^a   Missous, M ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TERAVIEW LTD   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COSTS; EPITAXIAL GROWTH; FOURIER TRANSFORMS; FREQUENCY DOMAIN ANALYSIS; LASER PULSES; OPTOELECTRONIC DEVICES; PHOTOCONDUCTING MATERIALS; PHOTOCURRENTS; RECEIVING ANTENNAS; SEMICONDUCTOR LASERS; SPURIOUS SIGNAL NOISE; TIME DOMAIN ANALYSIS;

IMAGE RESOLUTION; PARABOLIC MIRRORS; PHOTOMIXING;

IMAGING SYSTEMS;

EID: 0742287110     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20040102     Document Type: Article

References (7)

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2. Verghese, S., et al.: 'Generation and detection of coherent terahertz waves using two photomixers', Appl. Phys. Lett., 1998, 73, (26), pp. 3824-3826
3. Köhler, R., et al.: Terahertz semiconductor-heterostructure laser', Nature, 2002, 417, (6885), pp. 156-159
4. Siebert, K.J., et al.: 'All-optoelectronic continuous wave THz imaging for biomedical applications', Phys. Med. Biol., 2002, 47, pp. 3743-3748
5. Kleine-Ostmann, T., et al.: 'Continuous-wave THz imaging', Electron. Lett., 2001, 37, (24), pp. 1461-1462
6. Gregory, I.S., et al.: 'High resistivity annealed low-temperature GaAs with 100 fs lifetimes', Appl. Phys. Lett., 2003, 83, (20), pp. 4199-4201
7. Brown, E.R., et al.: 'Milliwatt output levels and superquadratic bias dependence in a low-temperature-grown GaAs photomixer', Appl. Phys. Lett., 1994, 64, (24), pp. 3311-3313