Nanoscale strain and band structure engineering using epitaxial stressors on ultrathin silicon-on-insulator

Surface Science

Volumn 532-535, Issue , 2003, Pages 789-794

  Sutter, P ^a   Sutter, E ^a   Rugheimer, P ^b   Lagally, M G ^b  

^a Department of Geology and Geological Engineering   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Electron microscopy; Germanium; Molecular beam epitaxy; Self assembly; Silicon; Silicon oxides; Surface roughening

Indexed keywords

BAND STRUCTURE; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON ON INSULATOR TECHNOLOGY; STRESSES; SURFACE ROUGHNESS; ULTRATHIN FILMS;

EPITAXIAL STRESSORS;

NANOSTRUCTURED MATERIALS;

EID: 0038183829     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00223-1     Document Type: Conference Paper

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