Room-temperature growth of epitaxial (111) Fe 3O 4 films with conductive Cu underlayer

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Huang, Po Hsiang ^a   Lai, Chih Huang ^a   Huang, R T ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GRAINS; INTERFACE ROUGHNESS; REACTION ION-BEAM SPUTTERING; SELECTED AREA DIFFRACTION (SAD);

ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; ION BEAMS; IRON COMPOUNDS; MAGNETIZATION; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 20944440282     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1854453     Document Type: Conference Paper

References (9)

1. G. Mariotto, S. Murphy, and I. V. Shvets, Phys. Rev. B 66, 245426 (2002).
2. Y. S. Dedkov, U. Rudiger, and G. Guntherodt, Phys. Rev. B 65, 064417 (2002).
3. W. Kim, K. Kawaguchi, N. Koshizaki, M. Sohma, and T. Matsumoto, J. Appl. Phys. 93, 8032 (2003).
4. C. S. Liu and L. J. Chen, Appl. Surf. Sci. 92, 84 (1996).
5. C. A. Chang, Phys. Rev. B 42, 11946 (1990).
6. C. H. Lai, S. A. Chen, and J. C. A. Huang, J. Appl. Phys. 87, 6656 (2000).
7. T. Fujii, F. M. F. de Groot, G. A. Sawatzky, F. C. Voogt, T. Hibma, and K. Okada, Phys. Rev. B 59, 3195 (1999).
8. P. A. van Aken and B. Liebscher, Phys. Chem. Miner. 29, 188 (2002).
9. D. T. Margulies, F. T. Parker, F. E. Spada, R. S. Goldman, J. Li, R. Sinclair, and A. E. Berkowitz, Phys. Rev. B 53, 9175 (1996).