Electronic transitions at defect states in Cz p -type silicon

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Castaldini, A ^a   Cavalcoli, D ^a   Cavallini, A ^a   Binetti, S ^b   Pizzini, S ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASTIC DEFORMATION;

DEEP HOLE TRAP; METALLIC CONTAMINATION; MINORITY CARRIER TRANSIENT SPECTROSCOPY (MCTS); PUNCH-OUT DISLOCATIONS (POD);

SILICON;

EID: 20944440063     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1881788     Document Type: Article

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