In situ nanointerconnection for nanoelectronics via direct auto-catalytic lateral growth

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Lee, Yun Hi ^a   Jang, Y T ^a,b   Ju, B K ^a  

^a Korea University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSIS; CHEMICAL VAPOR DEPOSITION; CHROMIUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRODES; MICROPROCESSOR CHIPS; REDUCTION; SCANNING ELECTRON MICROSCOPY; SHEAR FLOW; SILICA;

AUTOCATALYTIC FUNCTION; NANOELECTRONICS; NANOINTERCONNECTION; RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

NANOTECHNOLOGY;

EID: 20844462867     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1915530     Document Type: Article

References (14)

1. Th. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C. Cheunh, and Ch. M. Lieber, Science 289, 94 (2000).
2. W. Honlein, Jpn. J. Appl. Phys., Part 1 41, 4370 (2002).
3. S. J. Wind, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. 91, 058301 (2003).
4. S. J. Tans, Nature (London) 386, 474 (1997).
5. Y. Zhang, A. Chang, J. Cao, Q. Wang, W. Kim, Y. Li, N. Moriss, E. Yenilmez, J. Kong, and H. J. Dai, Appl. Phys. Lett. 79, 3155 (2001).
6. M. Su, Y. Li, B. Maynor, A. Buldum, J. P. Lu, and J. Liu, J. Phys. Chem. B 104, 6505 (2000).
7. E. Joselevich and C. M. Lieber, Nano Lett. 2, 1137 (2002).
8. S. G. Rao, L. Huang, W. Setyawan, and S. H. Hong, Nature (London) 425, 36 (2003).
9. Y.-H. Lee, Y. T. Jang, D. H. Kim, J. H. Ahn, and B. K. Ju, Adv. Mater. (Weinheim, Ger.) 13, 1371 (2001).
10. Y. Huang, X. Duan, Q. Wei, and C. M. Lieber, Science 291, 630 (2001).
11. C. A. Stover, D. L. Koch, and C. Cohen, J. Fluid Mech. 238, 277 (1992).
12. D. L. Koch and E. S. G. Shaqfeh, Phys. Fluids A 2, 2093 (1990).
13. Y.-H. Lee, Y. T. Jang, C. H. Choi, and B. K. Ju, Appl. Phys. Lett. 81, 745 (2002).
14. L. X. Benedict, S. G. Louie, and M. L. Cohen, Phys. Rev. B 52, 8541 (1995).