Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Suga, T ^a,c   Kameyama, S ^a   Yoshioka, S ^a   Yamamoto, T ^a,c   Tanaka, I ^a   Mizoguchi, T ^b  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKFILL PRESSURE; CHEMICAL BONDINGS; NANOTEXTURE; X-RAY ABSORPTION NEAR-EDGE STRUCTURES (XANES);

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PULSED LASER DEPOSITION; SAPPHIRE; SUBSTRATES; TEMPERATURE DISTRIBUTION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

ALUMINUM NITRIDE;

EID: 20844458576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1904714     Document Type: Article

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