Infrared phototransistor using capacitively coupled two-dimensional electron gas layers

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  An, Zhenghua ^a,c   Chen, Jeng Chung ^a,c   Ueda, T ^a,c   Komiyama, S ^a   Hirakawa, K ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; INFRARED DEVICES; PHOTOCURRENTS; PHOTODETECTORS; PHOTOSENSITIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON GAS LAYERS; ENERGY SPACING; INTERSUBBAND TRANSITION; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

PHOTOTRANSISTORS;

EID: 20844432866     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1920425     Document Type: Article

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