Influence of P gettering thermal step on light-induced degradation in Cz Si

Solar Energy Materials and Solar Cells

Volumn 88, Issue 3, 2005, Pages 247-256

  Caballero, L J ^a   Del Canizo C ^a   Sanchez Friera P ^b   Luque, A ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b Isofoton SA   (Spain)

Author keywords

Boron oxygen defect; Cz silicon; Lifetime degradation; Light induced degradation; Phosphorus gettering

Indexed keywords

BORON; COMPUTER SIMULATION; CRYSTAL DEFECTS; DIFFUSION; DOPING (ADDITIVES); HEAT TREATMENT; OXYGEN; PHOSPHORUS; PHOTODEGRADATION; SILICON; SOLAR CELLS; THERMAL EFFECTS;

BORON-OXYGEN DEFECTS; CZ SILICON; LIFETIME DEGRADATION; LIGHT-INDUCED DEGRADATION; PHOSPHORUS GETTERING;

GETTERS;

EID: 20744453950     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2004.10.007     Document Type: Article

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