High-performance field-effect transistors based on Langmuir-Blodgett films of cyclo[8]pyrrole

Langmuir

Volumn 21, Issue 12, 2005, Pages 5391-5395

  Xu, Hai ^a   Yu, Gui ^a   Xu, Wei ^a   Xu, Yu ^a   Cui, Guanglei ^a   Zhang, Deqing ^a   Liu, Yunqi ^a   Zhu, Daoben ^a  

^a INSTITUTE OF CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AROMATIC COMPOUNDS; ATOMIC FORCE MICROSCOPY; CHARGE TRANSFER; ENERGY GAP; LANGMUIR BLODGETT FILMS; PHASE INTERFACES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

MOLECULAR MATERIALS; MOLECULAR ORBITALS; ORGANIC FIELD EFFECT TRANSISTORS (OFET); PLASTIC CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 20744442585     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la050106d     Document Type: Article

References (27)

1. (a) Bao, Z. N. Adv. Mater, 2000, 12, 227.
2. (b) Dimitrakopoulos, C. D.; Malenfant, P. R. L. Adv. Mater. 2002, 14, 99.
3. (c) Katz, H. E.; Bao, Z. N.; Gilat, S. L.Acc. Chem. Res. 2001, 34, 359.
4. (d) Katz, H. E. J. Mater. Chem. 1997, 7, 369.
5. (a) Gamier, F. Chem. Phys. 1998, 227, 253.
6. (b) Horowitz, G.; Hajilaoui, R.; Bouchriha, R. B.; Hajlaoui, M. Adv. Mater. 1998, 10, 923.
7. (c) Nelson, S. F.; Lin, Y. Y.; Gundlach, D. J.; Jackson, T. N. Appl. Phys. Lett. 1998, 72, 1854.
8. (d) Meng, H.; Bendikov, M.; Mitchell, G.; Helgeson, R.; Wudl, R.; Bao, Z. N.; Siegrist, T.; Kloc, C.; Chen, C. H. Adv. Mater. 2003, 15, 1090.
9. (a) Akimichi, H.; Waragai, K; Hotta, S.; Sakaki, H. Appl. Phys. Lett. 1991, 58, 1500.
10. (b) Garnier, F.; Yassar, A.; Hajlaoui, R.; Horowitz, G.; Deloffre, F.; Servet, B.; Ries, S.; Alnot, P. J. Am. Chem. Soc. 1993, 115, 8716.
11. (c) Bao, Z.; Dodabalapur, A.; Lovinger, A. J. Appl. Phys. Lett. 1996, 69, 4108.
12. (d) Facchetti, A.; Nushrush, M.; Katz, H. E.; Marks, T. Adv. Mater. 2003, 15, 33.
13. See, for example: (a) Mas-Torrent, M.; Durkut, M.; Hadley, P.; Ribas, X.; Rovira, C. J. Am. Chem. Soc. 2004, 126 (4), 984.
14. (b) Yasuda, T.; Fujita, K.; Tsutsui, T.; Geng, Y.; Culligan, S. W.; Chen, S. H. Chem. Mater. 2005, 17 (2), 264.
15. (c) Heeney, M.; Bailey, C.; Genevicius, K.; Shkunov, M.; Sparrowe, D.; Tierney, S.; McCulloch, I. J. Am. Chem. Soc. 2005, 127, 1078.
16. (d) Wu, Y.; Li, Y.; Gardner, S.; Ong, B. S. J. Am. Chem. Soc. 2005, 127, 614.
17. Checcoli, P.; Conte, G.; Salvatori, S.; Paolesse, R.; Bolognesi, A.; Berliocchi, M.; Brunetti, F.; D'Amico, A.; Di Carlo, A.; Lugl, P. Synth. Met. 2003, 138, 261.
18. Noh, Y. Y.; Kim, J. J.; Yoshida, Y.; Yase, K. Adv. Mater. 2003, 15, 699.
19. Seidel, D.; Lynch, V.; Sessler, J. L. Angew. Chem., Int. Ed. 2002, 41, 1422.
20. See, for example: (a) Sessler, J. L.; Weghorn, S. J.; Lynch, V.; Johnson, M. R. Angew. Chem., Int. Ed. Engl. 1994, 33, 1509.
21. (b) Setsune, J. I.; Katakami, Y.; Iizuna, N. J. Am. Chem. Soc. 1999, 121, 8957.
22. (c) Shin, J. Y.; Furuta, H.; Yoza, K.; Igarashi, S.; Osuka, A. J. Am. Chem. Soc. 2001, 123, 7190.
23. T. Köhler, D.; Seidel, V.; Lynch, F. O.; Arp, Z.; Ou, K M.; Kadish, J. L.; Sessler, J. Am. Chem. Soc. 2003, 125, 6872.
24. (a) Xiao, K.; Liu, Y. Q.; Huang, X. B.; Xu, Y.; Yu, G.; Zhu, D. B. J. Phys. Chem. B 2003, 107, 9226.
25. (b) Xiao, K.; Liu, Y. Q.; Yu, G.; Zhu, D. B. Appl. Phys. A 2003, 77, 367.
26. Sze, S. M. Physics of Semiconductor Devices; John Wiley & Sons: New York, 1981.
27. Xu, G. F.; Bao, Z. N.; Groves, J. T. Langmuir 2000, 16, 1834.