Tetra-phenyl porphyrin based thin film transistors

Synthetic Metals

Volumn 138, Issue 1-2, 2003, Pages 261-266

  Checcoli, P ^a   Conte, G ^a   Salvatori, S ^a   Paolesse, R ^b   Bolognesi, A ^b   Berliocchi, M ^b   Brunetti, F ^b   D'Amico, A ^b   Di Carlo, A ^b   Lugli, P ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Leakage currents; Molecular electronics; Organic thin film transistor; Porphyrins

Indexed keywords

CHROMIUM; COATING TECHNIQUES; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HOLE MOBILITY; LEAKAGE CURRENTS; LITHOGRAPHY; OXIDATION; PORPHYRINS; SILICON; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ZERO-BIAS CHANNEL CONDUCTANCE;

THIN FILM TRANSISTORS;

EID: 0037901407     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(02)01308-5     Document Type: Conference Paper

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