Fatigueless ferroelectric capacitors with ruthenium bottom and top electrodes formed by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 12-15, 2005, Pages

  Furukawa, Taisuke ^a   Kuroiwa, Takeharu ^a   Fujisaki, Yoshihisa ^b   Sato, Takehiko ^a   Ishiwara, Hiroshi ^c  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b HITACHI LTD   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

BLT; Fatigue; Ferroelectric capacitor; MOCVD; Ruthenium

Indexed keywords

CURRENT DENSITY; ELECTRODES; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; FERROELECTRICITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; RUTHENIUM; SCANNING ELECTRON MICROSCOPY; SPIN COATING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

BLT; FATIGUE; FERROELECTRIC CAPACITORS; FERROELECTRIC RANDOM ACCESS MEMORIES (FERAM);

CAPACITORS;

EID: 20444482146     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L378     Document Type: Article

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