Growth of step bunches on a Si(001) vicinal face with drift of adatoms

Journal of the Physical Society of Japan

Volumn 73, Issue 7, 2004, Pages 1827-1832

  Sato, Masahide ^a   Mori, Tomonori ^a   Uwaha, Makio ^b   Hirose, Yukio ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Drift of adatoms; Growth law; Si(001) vicinal face; Step bunching

Indexed keywords

SILICON;

ADSORPTION; ANISOTROPY; ARTICLE; ATOM; DENSITY; DIFFUSION COEFFICIENT; DIMERIZATION; DIRECT CURRENT; EVAPORATION; HEATING;

EID: 20444461683     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.73.1827     Document Type: Article

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