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Although (formula presented) may be more suitable for Si(001) [see, for example, and, we use the (formula presented) potential in order to compare our results with the similar wandering in other conserved systems (Refs. As we will see, the step repulsion is essential to form the steady state, but the linear stability for wandering does not depend on the form of the potential [see Eqs. (6) and (18)
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Although (formula presented) may be more suitable for Si(001) [see, for example, B. Houchmandzadeh and C. Misbah, J. Phys. I5, 685 (1995)], we use the (formula presented) potential in order to compare our results with the similar wandering in other conserved systems (Refs. 161718). As we will see, the step repulsion is essential to form the steady state, but the linear stability for wandering does not depend on the form of the potential [see Eqs. (6) and (18)].
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In Ref., this phenomenon is used to determine the drift direction on anisotropic surfaces. However, we demonstrated in a Monte Carlo simulation that the bunching occurs irrespective of the current direction (Ref
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In Ref. 6 this phenomenon is used to determine the drift direction on anisotropic surfaces. However, we demonstrated in a Monte Carlo simulation that the bunching occurs irrespective of the current direction (Ref. 12).
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