Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

IEEE Nuclear Science Symposium Conference Record

Volumn 2, Issue , 2003, Pages 1028-1033

  Quinn, T ^a   Bates, R ^a   Bruzzi, M ^b   Cunningham, W ^a   Mathieson, K ^a   Moll, M ^c   Nelson, T ^a   Nilsson, H E ^d   Pintillie, I ^e   Reynolds, L ^a   Sciortino, S ^b   Sellin, P ^f   Strachan, H ^a   Svensson, B G ^g   Vaitkus, J ^h   Rahman, M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF FLORENCE   (Italy)

^c CERN   (Switzerland)

^d Dept Information Technology ^*  (Sweden)

^e UNIVERSITY OF HAMBURG   (Germany)

^f UNIVERSITY OF SURREY   (United Kingdom)

^g UNIVERSITY OF OSLO   (Norway)

^h VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA REDUCTION; ELECTRIC FIELDS; ELECTRIC INSULATORS; FABRICATION; RADIATION HARDENING; SIGNAL PROCESSING; SILICON CARBIDE;

CHARGE COLLECTION EFFICIENCY (CCE); LARGE HADRON COLLIDERS (LHC); RADIATION TOLERANCE; SIGNAL PULSES;

DETECTORS;

EID: 19944427763     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nssmic.2003.1351868     Document Type: Conference Paper

References (3)

1. F. H. Ruddy, A. R. Dulloo, J. G Seidel, J. W. Palmour and R. Singh, "The charged particle response of silicon carbide semiconductor radiation detectors,"Nucl. Instr. And Meth. A vol. 505, 2003, pp. 159-162.
2. F. Nava, E. Vittone, P. Vanni, G. Verzellesi, P.G.Fuochi, C. Lanzieri and M. Glaser, "Radiation yolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays," Nucl. Instr. And Meth. A vol. 505, 2003, pp. 645-655.
3. S. Lazanu, I. Lazanu, E. Borchi and M. Bruzzi, "Theoretical calculations of the primary defects induced by pions and protons in SiC," Nucl. Instr. And Meth. A vol. 485, 2003, pp. 768-773.