|
Volumn 9, Issue 4, 2001, Pages 249-255
|
Impact of light-induced recombination centres on the current - voltage characteristic of Czochralski silicon solar cells
|
Author keywords
[No Author keywords available]
|
Indexed keywords
COMPUTER SIMULATION;
CRYSTAL GROWTH FROM MELT;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON ENERGY LEVELS;
LIGHT;
OXYGEN;
SEMICONDUCTING BORON;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
BORON DOPED SILICON;
DEEP-LEVEL CENTER;
LIGHT DEGRADATION;
LIGHT-INDUCED RECOMBINATION CENTERS;
OXYGEN-CONTAMINATED SILICON;
SILICON SOLAR CELLS;
|
EID: 0035389734
PISSN: 10627995
EISSN: None
Source Type: Journal
DOI: 10.1002/pip.373 Document Type: Article |
Times cited : (28)
|
References (11)
|