Nanostructured porous silicon - Optical properties, surface modification and sensor applications

Chimia

Volumn 59, Issue 5, 2005, Pages 222-225

  Jelínek, Ivan ^a   Chvojka, Tomáš ^a   Vrkoslav, Vladimír ^a   Jindřich, Jindřich ^a   Lorenc, Miroslav ^a   Nižňanský, Daniel ^a   Němec, Ivan ^a   Král, Vladimír ^b   Dian, Juraj ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

^b INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

Author keywords

Optical sensor; Photoluminescence quenching; Porous silicon; Recognition enhancement

Indexed keywords

SILICON;

ADSORPTION; DERIVATIZATION; ELECTROCHEMISTRY; PHOTOCHEMICAL QUENCHING; PHOTOLUMINESCENCE; REVIEW; SENSOR; SYNTHESIS;

EID: 20444367990     PISSN: 00094293     EISSN: None     Source Type: Journal    
DOI: 10.2533/000942905777676498     Document Type: Review

References (24)

1. L.T. Canham, Appl. Phys. Lett. 1990, 57, 1046.
2. F. Koch, V. Petrova-Koch, T. Muschik, J. Luminesc. 1993, 57, 271.
3. L.T. Canham, in 'Properties of Porous Silicon', Ed. L.T. Canham, EMIS Datareview No. 18, INSPEC, London, 1997, p. 44.
4. M.J. Sailor, in 'Properties of Porous Silicon', Ed. L.T. Canham, EMIS Datareview No. 18, INSPEC, London, 1997, p. 364.
5. R.L. Smith, S.D. Collins, J. Appl. Phys. 1992, 71, R1.
6. M. Christophersen, J. Carstensen, S. Rönnebeck, C. Jäger, W. Jäger, H. Föll, J. Electrochem. Soc. 2001, 148, E267.
7. J.-N. Chazalviel, F. Ozanam, N. Gabouze, S. Fellah, R.B. Wehrspohn, J. Electrochem. Soc. 2002, 149, C511.
8. M. Christophersen, J. Carstensen, K. Voigt, H. Föll, Phys. Stat. Sol. (a) 2003, 197, 34.
9. S. Lust, C. Levy-Clement, J. Electrochem. Soc. 2002, 149, C338.
10. D.J. Blackwood, Y. Zhang, Electrochimica Acta 2003, 48, 623.
11. T. Holec, T. Chvojka, I. Jelínek, J. Jindřich, I. Němec, I. Pelant, J. Valenta, J. Dian, Mat. Sci. Eng. C 2002, 19, 251.
12. M.J. Sailor, E.J. Lee, Adv. Mater. 1997, 9, 783.
13. J.M. Buriak, Chem. Rev. 2002, 102, 1271.
14. W. Göpel, in 'Sensors', Vol. 8, Eds. H. Meixner, R. Jones, WCH Weinheim, 1995, p. 295.
15. D. Brumhead, L.T. Canham, D.M. Seekings, P.J. Tufton, Electrochim. Acta 1993, 38, 191.
16. J. Dian, A. Macek, D. Nižňanský, I. Němec, V. Vrkoslav, T. Chvojka, I. Jelínek, Appl. Surf. Sci. 2004, 238, 169.
17. B. Bessaïs, O. Ben Younes, H. Ezzaouia, N. Mliki, M.F. Boujmil, M. Oueslati, R. Bennaceur, J. Luminesc. 2000, 90, 101.
18. T. Chvojka, T. Holec, I. Jelínek, I. Němec, J. Jindřich, M. Lorenc, J. Koutníková, V. Král, J. Dian, in 'Photonics, Devices and Systems II', Eds. M. Hrabovský, D. Senderáková, P. Tománek, Proc. SPIE Vol. 5036, 2003, 51.
19. S. Fellah. R.B. Wehrspohn, N. Gabouze, F. Ozanam, J.N. Chazalviel, J. Luminesc. 1999, 80, 109.
20. L.T. Canham, in 'Properties of Porous Silicon', Ed. L.T. Canham, EMIS Datareviews Series No. 18, INSPEC, London 1997, p. 83.
21. S.J. Gregg, K.S.W. Singh, 'Adsorption, surface area and porosity', Academic Press, London 1967.
22. T. Chvojka, V. Vrkoslav, I. Jelínek, J. Jindřich, M. Lorenc, J. Dian, Sens. & Actuators B 2004, 100, 246.
23. V. Vrkoslav, I. Jelínek, M. Matocha, V. Král, J. Dian, submitted to Mat. Sci. Eng. C.
24. V. Vrkoslav, I. Jelínek, G. Broncová, H. Březnová, V. Král, J. Dian, Chem. Lett. 2004, 98, 1039.