Novel 900 MHz/1.9 GHz Dual-Mode Power Amplifier Employing MEMS Switches for Optimum Matching

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 3, 2004, Pages 121-123

  Fukuda, Atsushi ^a   Okazaki, Hiroshi ^a   Hirota, Tetsuo ^b   Yamao, Yasushi ^a  

^a NTT DOCOMO   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Band switchable matching network; MEMS; Multiband; Power amplifiers; Switch

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC LINES; ELECTRIC LOADS; FREQUENCY RESPONSE; INSERTION LOSSES; MICROELECTROMECHANICAL DEVICES; OPTIMIZATION; PERFORMANCE; SWITCHING SYSTEMS;

BAND SWITCHABLE MATCHING NETWORKS; MATCHING NETWORKS (MN); MULTIBANDS; SOFTWARE DEFINED RADIO (SDR);

AMPLIFIERS (ELECTRONIC);

EID: 2042476055     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2003.821496     Document Type: Article

References (4)

1. K. Yamamoto, T. Asada, S. Suzuki, T. Miura, A. Inoue, S. Miyakuni, J. Otsuji, R. Hattori, Y. Miyazaki, and T. Shimura, "A GSM/EDGE dual-mode, 900/1800/1900-MHz triple-band HBT-MMIC power amplifier module," Proc. IEEE RF-IC Symp., pp. 245-248, 2002.
2. H. Jager, A. Grebennikov, E. Heaney, and R. Weigel, "Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications," in Proc. IEEE MTT-S Dig., 2002, pp. 1035-1038.
3. L.P.B. Katehi, J. F. Harvey, and E. Brown, "MEMS and Si micromachined circuits for high-frequency applications," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 858-866, Mar. 2002.
4. T. Seki, "Development and packaging of RF MEMS series switch," in 2002 APMC Workshop Dig., Nov. 2002, pp. 266-272.