Magnetoresistance of a Si-MOSFET structure in a parallel magnetic field

Physica B: Condensed Matter

Volumn 346-347, Issue 1-4, 2004, Pages 493-497

  Broto, J M ^a   Goiran, M ^a   Rakoto, H ^a   Gold, A ^b   Dolgopolov, V T ^c  

^a INSA   (France)

^b CEMES CNRS   (France)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

Magnetoresistance; Parallel magnetic field; Spin polarisation

Indexed keywords

ANISOTROPY; CARRIER CONCENTRATION; ELECTRON GAS; FERMI LEVEL; HETEROJUNCTIONS; LIGHT POLARIZATION; LIGHT SCATTERING; MAGNETORESISTANCE; OSCILLATIONS; REFRIGERATORS; SILICON;

FINITE WIDTH EFFECTS; PARALLEL MAGNETIC FIELD; SPIN-POLARIZATION; TRANSPORT THEORY;

MOSFET DEVICES;

EID: 2042446422     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.01.134     Document Type: Conference Paper

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