Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T

Physica B: Condensed Matter

Volumn 346-347, Issue 1-4, 2004, Pages 432-436

  Smirnov, D ^a,d   Raymond, S ^b   Studenikin, S ^b   Babinski, A ^a   Leotin, J ^a   Frings, P ^a,c   Potemski, M ^a   Sachrajda, A ^b  

^a CNRS   (France)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF AMSTERDAM   (Netherlands)

^d FLORIDA STATE UNIVERSITY   (United States)

Author keywords

Electronic structure; Magnetic field; Quantum dots

Indexed keywords

CAMERAS; CHARGE COUPLED DEVICES; ELECTRONIC STRUCTURE; GROUND STATE; MAGNETIC FIELD EFFECTS; MAGNETOOPTICAL EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

DIAMAGNETIC BLUESHIFT; ELECTRON-HOLE PAIRS; INTER-SHELL SPACINGS; PULSED MAGNETS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2042437748     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.01.121     Document Type: Conference Paper

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