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Applied Physics Letters

Volumn 81, Issue 8, 2002, Pages 1480-1482

Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence

(7) Maes, J a Hayne, M a Moshchalkov, V V a Patane A b Henini, M b Eaves, L b Main, P C b

a UNIVERSITY OF LEUVEN (Belgium)

b UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CONFINEMENT; FORMATION PROCESS; GAAS; HIGH MAGNETIC FIELDS; INAS; INAS/GAAS; MAGNETOPHOTOLUMINESCENCE; QUANTUM DOT MORPHOLOGY; QUANTUM-DOT CONFINEMENTS; SUBSTRATE ORIENTATION;

INDIUM ARSENIDE; MAGNETIC FIELDS; MONOLAYERS; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

SUBSTRATES;

EID: 79955995906 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1501160 Document Type: Article

Times cited : (11)

References (8)

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4
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