Non-volatile thin film transistors using ferroelectric/ITO structures

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 107-112

  Tokumitsu, Eisuke ^a   Miyasako, Takaaki ^a   Senoo, Masaru ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CURRENTS; ELECTRIC INSULATORS; FERROELECTRIC DEVICES; GATES (TRANSISTOR); INDIUM COMPOUNDS; MOBILE TELECOMMUNICATION SYSTEMS; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SOL-GELS; TIN COMPOUNDS;

FERROELECTRIC CAPACITORS; FERROELECTRIC GATE INSULATORS; FERROELECTRIC POLARIZATION; GATE INSULATOR;

THIN FILM TRANSISTORS;

EID: 20344405205     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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