Electrical properties of sol-gel derived ferroelectric Pb(Zr,Ti)O 3 films fabricated using low-pressure consolidation process

IEICE Transactions on Electronics

Volumn E87-C, Issue 10, 2004, Pages 1694-1699

  Miyasako, Takaaki ^a   Senoo, Masaru ^a   Tokumitsu, Eisuke ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

FeRAM; Low pressure consolidation; PZT; Sol gel method

Indexed keywords

CRYSTALLIZATION; ELECTRIC POTENTIAL; FERROELECTRIC THIN FILMS; LEAD COMPOUNDS; LEAKAGE CURRENTS; PRESSURE EFFECTS; RANDOM ACCESS STORAGE; SOL-GELS;

FERAM; LOW PRESSURE CONSOLIDATION; PZT; REMANENT POLARIZATION; SOL-GEL METHOD;

ELECTRIC PROPERTIES;

EID: 7544249373     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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