A 132Gb/s 4:1 Multiplexer in 0.13μm SiGe-bipolar technology

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2004, Pages 215-218

  Meghelli, Mounir ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

4:1 Multiplexer; Multiplexer; SiGe bipolar technology

Indexed keywords

MULTIPLEXING OPERATION; SIGI-BIPOLAR TECHNOLOGY; SIGNAL INTEGRITY; TRANSISTOR LEVEL;

BIPOLAR TRANSISTORS; COMPUTER AIDED DESIGN; COMPUTER ARCHITECTURE; DIGITAL CIRCUITS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES;

MULTIPLEXING;

EID: 20344400684     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2004.1392541     Document Type: Conference Paper

References (9)

1. M. Meghelli, A. Rylyakov, S. Zier, M. Soma, D. Friedman, "A 0.18μm SiGe BiCMOS Receiver and Transmitter Chipset for SONET OC-768 Transmission Systems", IEEE Jour. Of Solid-State Circuits, Vol. 38, No. 12, pp. 2147-2154, Dec. 2002.
2. A. Ong, S Benyamin, V. Condito, Q. Lee, J.-P. Mattia, D.K. Shaeffer, A. Shahanu, X. Si, H. Tao, M. Tarsia, W. Wong, M. Xu, "A 40-43Gb/s clock and data recovery IC with integrated SFI-5 1:16 demultiplexer in SiGe technology", International Solid-State Circuits Conference, Digest of Technical Papers, pp. 234-235, 2003.
3. D.K. Shaeffer, H. Tao, Q. Lee, A. Ong, V. Condito, S. Benyamin, W. Wong, X. Si, S. Kudszus, M. Tarsia, "A 40/43Gb/s SONET OC-768 SiGe 4:1 MUX/CMU", International Solid-State Circuits Conference, Digest of Technical Papers, pp. 236-237, 2003.
4. T SiGe HBTs - expanding the horizons of SiGe BiCMOS", International Solid-State Circuits Conference, Digest of Technical Papers, pp. 180-181, 2002.
5. B. Jagannathan, M. Meghelli, K. Chan, J.-S. Rieh, K. Schonenberg, D. Ahlgren, S. Subbanna, G. Freeman, "3.9 ps SiGe HBT ECL Ring Oscillator and Transistor Design for Minimum Gate Delay", IEEE Electron Device Letters, Vol. 24, pp. 324-326, May 2003.
6. A. Rylyakov and T. Zwick, "96 GHz Static Frequency Divider in SiGe bipolar technology", GaAs IC symposium, pp. 288-290, 2003.
7. M. Meghelli, A. Rylyakov, Lei Shan, "50-Gb/s SiGe BiCMOS 4:1 Multiplexer and 1:4 Demultiplexer for Serial Communication Systems", IEEE Jour. Of Solid-State Circuits, Vol. 37, No. 12, pp. 1790-1794, Dec. 2002.
8. M. Meghelli, "A 43Gb/s Full-Rate Clock Transmitter in 0.18μm SiGe BiCMOS Technology", to be published, BCTM 2004.
9. Y Nakasha, T. Suzuki, H. Kano, A. Ohya, K. Sawada, K. Makiyama, T. Takahashi, M. Nishi, T. Hirose, M. Takikawa, Y. Watanabi, "A 43 Gb/s Full-Rate-Clock 4:1 Multiplexer in InP-based HEMT Technology", International Solid-State Circuits Conference, Digest of Technical Papers, pp. 190-191, 2002.