Process- and geometry-scalable bipolar transistor and transmission line models for Si and SiGe MMICs in the 5-22 GHz range

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 307-310

  Voinigescu, S P ^a   Marchesan, D ^a   Showell, J L ^a   Maliepaard, M C ^a   Cudnoch, M ^a   Schumacher, M G M ^a   Herod, M ^a   Walkey, D J ^a   Babcock, G E ^a   Schvan, P ^a   Hadaway, R A ^a  

^a NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND AMPLIFIERS; DELAY CIRCUITS; ELECTRIC LINES; EMITTER COUPLED LOGIC CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS;

PRINCIPAL COMPONENT ANALYSIS (PCA); STATISTICAL TRANSISTORS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0032266787     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)