Erratum: Adhesion study of low-k/Si system using 4-point bending and nanoscratch test (Materials Science and Engineering B (2005) 121:3 (193-198) PII: S0921510705002175 DOI: 10.1016/j.mseb.2005.03.030);Adhesion study of low-k/Si system using 4-point bending and nanoscratch test

Materials Science and Engineering: B

Volumn 121, Issue 3, 2005, Pages 193-198

  Damayanti, M ^a,b   Widodo, J ^b   Sritharan, T ^a   Mhaisalkar, S G ^a   Lu, W ^b   Gan, Z H ^a   Zeng, K Y ^c   Hsia, L C ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

4 Point bend test; Adhesion; Low k; Nanoscratch test

Indexed keywords

ADHESION; BENDING (DEFORMATION); CHEMICAL VAPOR DEPOSITION; FAILURE ANALYSIS; HARDNESS; INTERFACES (MATERIALS); PORE SIZE; SUBSTRATES;

4-POINT BEND TEST; DECOHESION; LOW-K; NANOSCRATCH TEST;

SILICON;

EID: 20344390042     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.06.013     Document Type: Erratum

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