Choice of flat-band voltage, V DD and diameter of ambipolar schottky-barrier carbon nanotube transistors in digital circuit design

2004 4th IEEE Conference on Nanotechnology

Volumn , Issue , 2004, Pages 311-313

  Raychowdhury, Arijit ^a   Guo, Jing ^a   Roy, Kaushik ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS (CNFET); CHARGE NEUTRALITY LEVEL; DENSITY OF STATES; ELECTRON CHARGE;

CARBON NANOTUBES; CMOS INTEGRATED CIRCUITS; DIGITAL CIRCUITS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); POISSON EQUATION; SCHOTTKY BARRIER DIODES;

ELECTRIC POTENTIAL;

EID: 20344388574     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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