Molecular beam epitaxial growth and characterization of Cd-based II-VI wide-bandgap compounds on Si substrates

Journal of Electronic Materials

Volumn 34, Issue 5, 2005, Pages 655-661

  Brill, G ^a   Chen, Y ^a   Amirtharaj, P M ^a   Sarney, W ^c   Chandler Horowitz, D ^b   Dhar, N K ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c NONE

Author keywords

(211); Bandgap; Bowing; CdSe; CdSeTe; CdZnSeTe; Cubic; Defects; Molecular beam epitaxy (MBE); Photoluminescence (PL); Photoreflectance (PR); Quaternary; Si; Ternary; Transmission electron microscopy (TEM); Wurtzite; Zincblende

Indexed keywords

BENDING (FORMING); CADMIUM; DEFECTS; MERCURY COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

(211); BANDGAP; CDSE; CDSETE; CDZNSETE; PHOTOREFLECTANCE (PL);

MOLECULAR BEAM EPITAXY;

EID: 20344382512     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0080-y     Document Type: Conference Paper

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