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Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 602-606

Growth conditions in molecular beam epitaxy for controlling CdSeTe epilayer composition

(3) Matsumura, Nobuo a Sakamoto, Takuya a Saraie, Junji a

a KYOTO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

A1. Growth models; A3. Molecular beam epitaxy; B1. Alloys; B1. Cadmium compounds; B2. Semiconducting cadmium compounds

Indexed keywords

CHEMISORPTION; COMPOSITION; DESORPTION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EPILAYERS;

SEMICONDUCTOR GROWTH;

EID: 0037382873 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)02434-X Document Type: Conference Paper

Times cited : (21)

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