Fabrication of thick SiO2 block with dry-released underneath cavity in silicon for RF MEMS

Electronics Letters

Volumn 41, Issue 11, 2005, Pages 662-664

  Miao, J ^a   Sun, J ^a   Puech, M ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Alcatel Vacuum Technology   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FABRICATION; OXIDATION; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; THERMAL EFFECTS;

DEEP REACTIVE ION ETCHING (DRIE); ELECTRIC LOSS; SIDEOX TECHNOLOGY; SILICON BEAMS;

MICROELECTROMECHANICAL DEVICES;

EID: 20344369337     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051305     Document Type: Article

References (7)

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