MgZaO/ZnO heterostructures for UV light emitters and spintronic applications: Material growth and device design (Invited Talk)

Proceedings - Electrochemical Society

Volumn 6, Issue , 2004, Pages 70-79

  Osinsky, A ^a   Dong, J W ^a   Kauser, M Z ^a,c   Hertog, B ^a   Dabiran, A M ^a   Plaut, C ^a   Chow, P P ^a   Pearton, S J ^b   Dong, X Y ^c   Palmstrom, C J ^c  

^a SVT ASSOCIATES   (United States)

^b University of Florida   (United States)

^c University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURES; EPITAXIAL LAYERS; OPTICAL TRANSITIONS; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY; SPINTRONIC DEVICES;

COMPUTER SIMULATION; CRYSTALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; FERROMAGNETISM; LIGHT EMISSION; LIGHT EMITTING DIODES; MAGNESIUM COMPOUNDS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PIEZOELECTRICITY; SEMICONDUCTOR DOPING; SQUIDS; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 20144388970     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)

1. D.C. Look, Mater. Sci. Eng. B 80, 383 (2001)
2. D. P. Norton, Y. W. Heo, M. P. Ivill, K. Ip, S. J. Pearton, M. F. Chisholm, and T. Steiner "ZnO: Growth Doping and Processing", Materials Today (2004)
3. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas and O.W. Holland, Applied Physics Letters, 75, 3327 (1999).
4. Y. Chen, H.J. Ko, S.K. Hong, T. Yao, Y. Sagawa, Appl. Phys. Lett. 80, 1358 (2002).
5. G. L. Snider, 1D Poisson/Schrodinger- band diagram calculator, University of Notre Dame, (1996).
6. S. Hong, T. Hanada, H. Makino, Y. Chen, H. Ko and T. Yao et al., Appl. Phys. Lett. 78, 3349 (2001).
7. Y. I. Alivov, E.V. Kalinina and A. E. Cherenkov et al., Appl. Phys. Lett. 83, 4719 (2003).
8. O. Ambacher, B. Foutz, J. Smart, J. R. Shelay et al., J. Appl. Phys. 87, 334 (2000).
9. D. Bykhovski, B. L. Gelmont and M. S. Shur, J. Appl. Phys. 81, 6332(1997).
10. G. Coli, K. K. Bajaj, Appl. Phys. Lett. 78, 2861 (2001).
11. N. A. Hill and U. Waghmare, Phys. Rev. B 62, 8802 (2000).
12. S. Heikman, S. Keller, D. S. Green, S. P. DenBaars and U. K. Mishra, J. Appl. Phys. 94, 5321 (2003).
13. V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
14. W. Gotz, N.M. Johnson, J. Walker, D. P. Bour, and R. A. Street, Appl. Phys. Lett. 68, 667 (1995).
15. Y. Xu and W. Y. Ching, Phys. Rev. B 48, 4335 (1993).
16. N. Garndjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laugt, and J. Massies, J. Appl. Phys. 86, 3714 (1999).
17. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996).
18. Vurgraftman and J. R. Meyer et al., J. Appl. Phys. 89, 5815 (2001).
19. Ohtomo, M. Kawasaki, T. Koida et al., Appl. Phys. Lett. 72, 2466 (1998).
20. M. Ataev, Y. I. Alivov, V. A. Nikitenko et al., J. Opt. Adv. Mater. 5, 899 (2003).
21. W. S. Baer, Phys. Rev. 154, 785 (1967).
22. Y. Noel, M. Llunell et al., Phys. Rev. B 66, 214107 (2002).