Room temperature cw operation of InGaAs/lnGaAsP/InP quantum dot lasers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2004, Pages 59-60

  Pyun, S H ^a   Lee, S H ^a   Lee, I C ^a   Jeong, Weon G ^a   Jang, J W ^b   Stevenson, R ^c   Dapkus, P Daniel ^c   Lee, D ^d   Lee, J H ^e   Oh, D K ^e  

^a Sungkyunkwan University   (South Korea)

^b NanoEpi Technologies Corporation   (South Korea)

^c University of Southern California   (United States)

^d Chungnam National University   (South Korea)

^e Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; FIBER OPTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; TELECOMMUNICATION; THERMAL EFFECTS; WAVEGUIDES;

QUANTUM DOT LASERS; RIDGEWAVEGUIDES; ROOM TEMPERATURE; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20144388566     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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