Disordered electronic systems. II. Phase separation and the metal-insulator transition in metal-metalloid alloys

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 11, 2005, Pages

  Sonntag, Joachim ^a  

^a HL Planartechnik GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; METAL; TRANSITION ELEMENT;

ARTICLE; CONDUCTANCE; MATHEMATICAL ANALYSIS; MOLECULAR DYNAMICS; PHASE SEPARATION; PHASE TRANSITION; TEMPERATURE DEPENDENCE;

EID: 20144362982     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.115114     Document Type: Article

References (111)

1. P. P. Edwards, R. L. Johnston, C. N. R. Rao, D. P. Tunstall, and F. Hensel, Philos. Trans. R. Soc. London, Ser. A 356, 5 (1998).
2. N. F. Mott, Philos. Mag. 26, 1015 (1972).
3. N. F. Mott, Philos. Mag. B 44, 265 (1981).
4. E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. 42, 673 (1979).
5. P. W. Anderson, E. Abrahams, and T. V. Ramakrishnan, Phys. Rev. Lett. 43, 718 (1979).
6. D. J. Thouless, in Anderson Localization, edited by Y. Nagayoka and H. Fukuyama (Springer-Verlag, Berlin, 1982), p. 2.
7. W. L. McMillan and J. Mochel, Phys. Rev. Lett. 46, 556 (1981).
8. G. Hertel, D. J. Bishop, E. G. Spencer, J. M. Rowell, and R. C. Dynes, Phys. Rev. Lett. 50, 743 (1983).
9. S. Okuma, S. Shiratake, A. Asamitsu, and N. Nishida, Solid State Commun. 70, 1091 (1989).
10. A. Möbius, C. Frenzel, R. Thielsch, R. Rosenbaum, C. J. Adkins, M. Schreiber, H.-D. Bauer, R. Grötzschel, V. Hoffmann, T. Krieg, N. Matz, H. Vinzelberg, and M. Witcomb, Phys. Rev. B 60, 14209 (1999).
11. A. Möbius, D. Elefant, A. Heinrich, R. Müller, J. Schumann, H. Vinzelberg, and G. Zies, J. Phys. C 16, 6491 (1983).
12. A. Möbius, H. Vinzelberg, C. Gladun, A. Heinrich, D. Elefant, J. Schumann, and G. Zies, J. Phys. C 18, 3337 (1985).
13. A. Möbius, J. Phys. C 18, 4639 (1985).
14. A. Möbius, Phys. Status Solidi B 144, 759 (1987).
15. A. Möbius, Z. Phys. B: Condens. Matter 80, 213 (1990).
16. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979).
17. N. F. Mott, Metal-Insulator Transitions (Taylor and Francis, London, 1990).
18. K. Morigaki, Philos. Mag. B 42, 979 (1980).
19. N. Kishimoto and K. Morigaki, J. Phys. Soc. Jpn. 46, 497 (1979).
20. N. Kishimoto and K. Morigaki, J. Phys. Soc. Jpn. 46, 846 (1979).
21. R. Rosenbaum, A. Heines, A. Palevski, M. Karpovski, A. Gladkikh, M. Pilosof, A. J. Daneshvar, M. R. Graham, T. Wright, J. T. Nicholls, C. J. Adkins, M. Witcomb, V. Prozesky, W. Przybylowicz, and R. Pretorius, J. Phys.: Condens. Matter 9, 5395 (1997).
22. A. Endo, A. Suzuki, and K. Tanaka, J. Phys. Soc. Jpn. 68, 3533 (1999).
23. K. Kawade, A. Suzuki, and K. Tanaka, J. Phys. Soc. Jpn. 69, 777 (2000).
24. P. W. Anderson, Phys. Rev. 109, 1492 (1958).
25. P. W. Anderson, in Anderson Localization, edited by Y. Nagayoka and H. Fukuyama (Springer-Verlag, Berlin, 1988).
26. J. Sonntag, Phys. Rev. B 40, 3661 (1989).
27. v).
28. A. M. Edwards, M. C. Fairbanks, A. Singh, R. J. Newport, and S. J. Gurman, Physica B 158, 600 (1989).
29. A. M. Edwards, M. C. Fairbanks, and R. J. Newport, Philos. Mag. B 63, 457 (1991).
30. R. D. Lorentz, A. Bienenstock, and T. I. Morrison, Phys. Rev. B 49, 3172 (1994).
31. M. J. Regan, M. Rice, M. B. FernandezvanRaap, and A. Bienenstock, Phys. Rev. Lett. 73, 1118 (1994).
32. M. B. F. van Raap, M. J. Regan, and A. Bienenstock, J. Non-Cryst. Solids 191, 155 (1995).
33. S. Yoshizumi, D. Mael, T. H. Geballe, and R. L. Greene, in Localization and Metal-Insulator Transitions, edited by H. Fritzsche and D. Adler (Plenum Press, New York, 1985), p. 77.
34. D. Mael, S. Yoshizumi, and T. H. Geballe, Phys. Rev. B 34, 467 (1986).
35. J. Fischer and H. v. Löneysen, Ann. Phys. 2, 635 (1993).
36. U. Mizutani, T. Ishizuka, and T. Fukunaga, J. Phys.: Condens. Matter 9, 5333 (1997).
37. A. Y. Rogatchev, T. Takeuchi, and U. Mizutani, Phys. Rev. B 61, 10010 (2000).
38. K. M. Abkemeier, C. J. Adkins, R. Asal, and E. A. Davis, J. Phys.: Condens. Matter 4, 9113 (1992).
39. K. M. Abkemeier, C. J. Adkins, R. Asal, and E. A. Davis, Philos. Mag. B 65, 675 (1992).
40. H. Ishii, S. Brennan, and A. Bienenstock, J. Non-Cryst. Solids 299-302, 243 (2002).
41. M. J. Regan and A. Bienenstock, Phys. Rev. B 51, 12170 (1995).
42. R. L. Rosenbaum, M. Slutzky, A. Möbius, and D. S. McLachlan, J. Phys.: Condens. Matter 6, 7977 (1994).
43. P. Mangin, G. Marchal, C. Mourey, and C. Janot, Phys. Rev. B 21, 3047 (1980).
44. G. Marchal, P. Mangin, and C. Janot, Philos. Mag. B 42, 81 (1980).
45. M. L. Theye, V. N. Van, and S. Fisson, Philos. Mag. B 47, 31 (1983).
46. A. J. Shaldervan and N. G. Nakhodkin, Fiz. Tverd. Tela (S.-Peterburg) 11, 3407 (1969)
47. [Sov. Phys. Solid State 11, 2773 (1970)].
48. N. G. Nakhodkin and A. J. Shaldervan, Thin Solid Films 10, 109 (1972).
49. F. L. Galeener, Phys. Rev. Lett. 27, 1716 (1971).
50. Á. Barna, P. B. Barna, Z. Bodó, J. F. Pócza, I. Pozsgai, and G. Radnóczi, in Amorphous and Liquid Semiconductors, edited by J. Struke and W. Brenig (Taylor and Francis, London, 1974), Vol. 1, p. 109.
51. W. Fuhs, H.-J. Hesse, and K. H. Langer, in Amorphous and Liquid Semiconductors, edited by J. Struke and W. Brenig (Taylor and Francis, London, 1974), Vol. 1, p. 78.
52. P. Thomas, in Amorphous Semiconductors '76, edited by I. Kösa Somogyi (Akadémiai Kiadó, Budapest, 1977), Vol. 1, p. 65.
53. W. Fuhs, in Amorphous & Microcrystalline Semiconductor Devices, edited by J. Kanicki (Artech House, Boston, 1992), Vol. II, Chap. Electronic Properties of Amorphous Silicon (a-Si:H).
54. J. C. Knights, in The Physics of Hydrogenated Amorphous Silicon, edited by J. D. Joannopoulos and G. Lucovsky (Springer-Verlag, Berlin, 1984), Vol. I, p. 5.
55. G. S. Cargill III, Phys. Rev. Lett. 28, 1372 (1972).
56. R. Messier, S. V. Krishnaswamy, L. R. Gilbert, and P. Schwab, J. Appl. Phys. 51, 1611 (1980).
57. E. Davis and N. F. Mott, Philos. Mag. 22, 903 (1970).
58. 3" are solely used as symbols of the realized orbital configurations, but not to characterize the occupation [due to electron transfer, Eq. (1)].
59. K. Kobayashi, F. Itoh, T. Fukunaga, H. Fujimori, and K. Suzuki, in Rapidly Quenched Metals IV, edited by T. Masumoto and K. Suzuki (Japanese Institute of Metals, Sendai, 1981), at Sendai, Japan, 24-28 August 1981.
60. 3 there is not a crystalline counterpart (see Refs. 61-64). Another indication is the result that there is no discontinuity in the slope of the lgρ(ξ) dependence on ξ[ρ=1/σξ=x/(1-x)], see Fig. 3 of Pap. I.
61. K. Tanaka, T. Saito, K. Suzuki, and R. Hasegawa, Phys. Rev. B 32, 6853 (1985).
62. M. Hansen and K. Anderko, Constitution of Binary Alloys (McGraw-Hill, New York, 1958).
63. F. A. Shunk, Constitution of Binary Alloys, 2nd. suppl.(McGraw-Hill, New York, 1969).
64. G. V. Samsonov, L. A. Dvorina, and B. M. Rud, Silicides (Metallurgija, Moscow, 1979).
65. P. V. Geld and F. D. Sidorenko, Silicides of the Transition Metals of the Fourth Period (Metallurgija, Moscow, 1971).
66. A. Suzuki and K. Tanaka, J. Appl. Phys. 37, 4872 (1998).
67. B. W. Dodson, W. L. McMillan, J. M. Mochel, and R. C. Dynes, Phys. Rev. Lett. 46, 46 (1981).
68. G. Deutscher, Physica B & C 109 & 110, 1629 (1982).
69. Other metastable phases are known for Al-Ge (see Refs. 88 and 108).
70. G. Deutscher, M. Rappaport, and Z. Ovadyahu, Solid State Commun. 28, 593 (1978).
71. D. S. McLachlan, R. Rosenbaum, A. Albers, G. Eytan, N. Grammatica, G. Hurvits, J. Pickup, and E. Zaken, J. Phys.: Condens. Matter 5, 4829 (1993).
72. J. Shoshany, V. Goldner, R. Rosenbaum, M. Witcomb, D. S. McLachlan, A. Palevski, M. Karpovski, A. Gladkikh, and Y. Lereah, J. Phys.: Condens. Matter 8, 1729 (1996).
73. F. Catalina and C. N. Afonso, Thin Solid Films 167, 57 (1988).
74. Y. Lereah, G. Deutscher, and E. Grünbaum, Phys. Rev. A 44, 8316 (1991).
75. See Sec. II B of Pap. I and Fig. 2(b) therein.
76. R. Landauer, J. Appl. Phys. 23, 779 (1952).
77. i is the average atomic distance in the phase i.
78. B. Abeles, P. Sheng, M. D. Coutts, and Y. Arie, Adv. Phys. 24, 407 (1975).
79. B. Abeles, RCA Rev. 36, 594 (1975).
80. B. Abeles, in Applied Solid State Science, edited by R. Wolfe (Academic, New York, 1976), Vol. 6, p. 1.
81. S. R. Nagel, Adv. Chem. Phys. 51, 227 (1982).
82. W. L. Johnson and A. R. Williams, Phys. Rev. B 20, 1640 (1979).
83. v) as a measure for the amount of electron transfer to the phase with the deeper potential.
84. A. Möbius, Solid State Commun. 73, 215 (1990).
85. P. S. Kirejew, Physik der Halbleiter (Akademie-Verlag, Berlin, 1974).
86. T. C. Harman and J. M. Honig, Thermoelectric and Thermomagnetic Effects and Applications (McGraw-Hill, New York, 1967).
87. A. F. Ioffe, Physik der Halbleiter (Akademie-Verlag, Berlin, 1958).
88. D. Elefant, C. Gladun, J. Schumann, and H. Vinzelberg, J. Phys. C 16, 6491 (1983).
89. U. Köster, Acta Metall. 20, 1361 (1972).
90. B.
91. G. Hurvits, R. Rosenbaum, and D. S. Mclachlan, J. Appl. Phys. 73, 7441 (1993).
92. See, e.g., the TEM-micrografs by B. Abeles et al. (see Refs. 77 and 79) for the related class of cermets having granular structure as well, where such A-A phase grain contacts (for small x) are visible very well.
93. Notice that for large x granular structure is not realized (see Refs. 42, 70, and 73).
94. I. Webman, J. Jortner, and M. H. Cohen, Phys. Rev. B 16, 2959 (1977).
95. H. Scher and R. Zallen, J. Chem. Phys. 53, 3759 (1970).
96. x thin films by ir absorption measurements: in 11 different samples with x=0.25-0.53 the dielectric (insulating) oxid phase was found (a) to have a considerable amount of both Cr and Si atoms and (b) the same structural unit was realized, independent of x.
97. M. A. Howson and B. L. Gallagher, Phys. Rep. 170, 265 (1988).
98. M. R. Graham, C. J. Adkins, H. Behar, and R. Rosenbaum, J. Phys.: Condens. Matter 10, 809 (1998).
99. U. Mizutani and T. Yoshida, J. Phys. F: Met. Phys. 12, 2331 (1982).
100. For the Ioffe-Regel criterion kL≃π (see Ref. 97) or kL≃1/2π (see Ref. 110) or kL.1 (see Ref. 16) is given or proposed.
101. A. Isobe, M. Yamada, and K. Tanaka, J. Phys. Soc. Jpn. 66, 2103 (1997).
102. A. Suzuki, A. Endo, and K. Tanaka, J. Phys. Soc. Jpn. 68, 3623 (1999).
103. K. Tanaka, K. Furui, and M. Yamada, J. Phys. Soc. Jpn. 64, 4790 (1995).
104. Notice that in Refs. 23, 36, 65, and 100-102, x stands for the metal concentration, whereas in the present paper x stands for the metalloid concentration as introduced in Pap. I, already.
105. J. M. Ziman, J. Phys. C 1, 1532 (1968).
106. V. K. S. Vinod and S. Kirkpatrick, Adv. Phys. 20, 325 (1971).
107. With exception of intermetallic compounds at certain x.
108. W. Pauli, in Prinzipien der Quantentheorie I, edited by S. Flügge (Springer-Verlag, Berlin, 1958), p. 1.
109. M. Atzmon, C. D. Adams, Y.-T. Cheng, and D. J. Srolovitz, in Evolution of Thin Film and Surface Microstructure, edited by C. V. Thompson (Materials Research Society, Pittsburgh, PA, 1991), p. 143.
110. N. Van Den, A. Heinrich, K. Klostermann, and G. Sobe, Phys. Status Solidi A 93, 163 (1986).
111. U. Mizutani, Introduction to the Electron Theory of Metals (Cambridge University Press, Cambridge, 2001).