Structure and electronic properties of amorphous Ge-Pd alloys manifesting the metal-insulator transition. II. Photoemission spectroscopy and electronic structure calculations

Journal of the Physical Society of Japan

Volumn 68, Issue 11, 1999, Pages 3623-3630

  Suzuki, Atsuko ^a   Endo, Atsushi ^a   Tanaka, Kazuhide ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous Ge Pd alloy; Calculation; Cluster; DV x ; Localization; Metal insulator transition; Molecular orbital; Sputtering; XPS and UPS

Indexed keywords

EID: 0033273176     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.68.3623     Document Type: Article

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